Renesas launches brand's first low-voltage gallium nitride power semiconductor, targeting AI data centers, humanoid robots and other fields

This series is 100V enhanced GaN discrete power transistors, including multiple models such as RTP100E005G1FL. Compared with similar GaN devices, hard-switching FOM is reduced by up to 35%, soft-switching FOM is reduced by up to 63%, switching loss is greatly reduced by 40% to 70%, and the package is compatible with silicon devices, facilitating rapid migration of existing designs.#